拓扑绝缘体
密度泛函理论
紧密结合
拓扑(电路)
电子结构
钝化
电子能带结构
物理
材料科学
凝聚态物理
量子力学
纳米技术
图层(电子)
数学
组合数学
作者
Emeric Deylgat,Sabyasachi Tiwari,William G. Vandenberghe,Bart Sorée
摘要
Topological insulators have unique properties that make them promising materials for future implementation in next-generation electronic devices. However, topological insulators like stanene nanoribbons need to be passivated before they can be used in devices. We calculate the electronic band structure of stanene nanoribbons (SNRs) that are passivated by hydrogen (H), fluorine (F), chlorine (Cl), bromine (Br), iodine (I), or sodium (Na). We show that the difference between the electronegativity of the passivation material and the tin atoms defines the position of the Dirac cone of the topological insulator edge states. We develop a four-parameter tight-binding model based on the Kane–Mele model [Kane and Mele, Phys. Rev. Lett. 95, 226801 (2005); Kane and Mele, Phys. Rev. Lett. 95, 146802 (2005)]. The hopping parameters of the TB model are obtained by fitting the tight-binding model to the density functional theory (DFT) calculations. Finally, we demonstrate that the DFT band structures and the tight-binding model band structures are in good agreement with each other at low energies around the Dirac point, thereby capturing the complete physics of the passivated edge bands.
科研通智能强力驱动
Strongly Powered by AbleSci AI