量子点
激子
俄歇效应
电致发光
发光二极管
光电子学
二极管
电子
材料科学
物理
凝聚态物理
纳米技术
量子力学
图层(电子)
作者
Panlong Yu,Qilin Yuan,Jialong Zhao,Hanzhuang Zhang,Wenyu Ji
标识
DOI:10.1021/acs.jpclett.2c00604
摘要
A modified Langevin model has been proposed to study the electronic and excitonic dynamic processes in quantum dot light-emitting diodes (QLEDs), and the electroluminescence onset processes of the QLEDs under different charge-injection conditions have been explored. The simulation results are in good agreement with experimental curves, confirming the feasibility of this model. It is demonstrated that the formation of an exciton on the quantum dots (QDs) with one electron injected first followed by one hole is much more effective than that with the reverse sequence. That is, charging a QD with one electron first is more favorable for device performance enhancement, which is attributed to the low (high) Auger recombination rate of negative (positive) trions of commonly used type I QDs. Additionally, we demonstrate that enough electron injection is one of the prerequisites for high-performance QLEDs based on these type I QDs.
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