HfOx/AlOy Superlattice‐Like Memristive Synapse (Adv. Sci. 21/2022)

Superlattice-Like Memristive Synapse In article number 2201446, Xingsheng Wang and co-workers propose a HfOx/AlOy superlattice-like memristor and achieve controllable multi-level conductance switching in the electric synapse for neuromorphic computing. By periodically inserting the higher migration barrier of oxygen vacancy (VO) in Al2O3 atomic layer into HfOx, it gracefully controls the VO migration and the formation and rupture of conductive filaments.