半导体
计量学
量子计量学
光电子学
纳米技术
毫秒
材料科学
时间分辨率
量子点
晶体管
量子传感器
半导体器件制造
量子
足迹
极紫外光刻
物理
工程物理
平版印刷术
计算机科学
量子退相干
半导体器件
热的
光刻
分辨率(逻辑)
半导体材料
量子阱
量子技术
图像分辨率
标识
DOI:10.1021/acs.accounts.6c00047
摘要
centers are quantum sensors capable of measuring temperature, magnetic, and electric fields at the nanoscale. These measurements are crucial for the design and evaluation of next-generation semiconductor devices. An innovative technique, termed FND-based lock-in photoluminescence thermography, has been developed to enable wide-field, real-time temperature mapping of actively operating devices such as bipolar junction transistors and field-effect transistors. The method achieves nanometer-scale spatial resolution and millisecond temporal resolution, yielding valuable insights into heat generation and dissipation processes in operando semiconductor devices.In summary, NV centers in FNDs constitute robust platforms for quantum sensing and metrology across a broad range of domains. From enhancing the sensitivity of immunodiagnostics to advancing EUV imaging and improving semiconductor thermal analysis, these quantum defects serve as transformative tools at the intersection of materials chemistry, biomedicine, and quantum technologies.
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