2D Ferroelectrics and Antiferroelectrics for Neuromorphic Computing Devices

ABSTRACT Two‐dimensional (2D) van der Waals (vdW) ferroelectric and antiferroelectric (FE/AFE) materials, with atomic‐scale thickness, tunable polarization, and controllable interlayer coupling, have emerged as an ideal platform for next‐generation neuromorphic devices that could overcome the limitations of traditional von Neumann architectures. In this review, we summarize the rich physical properties of 2D vdW FE/AFE materials, including switchable polarization, layer‐dependent ferroelectricity, and antiferroelectric phase transitions, which enable them to mimic diverse functional behaviors. We further discuss their main preparation methods and corresponding device structures, exhibiting low energy consumption, multilevel conductive states, and synaptic plasticity, providing new opportunities for high‐density, low‐power brain‐inspired computing. Finally, we emphasize the significant potential of 2D vdW FE/AFE materials for neuromorphic computing and discuss the current challenges, providing inspiration for both fundamental physics research and device integration and advancing the applications of 2D vdW FE/AFE materials for edge computing‐based high‐performance intelligent devices.