Transparent Active‐Matrix Micro‐LED Array Driven by Vertically Stacked TiO 2 /HfO 2 ‐Based Memristors

Abstract Micro‐light‐emitting diodes (micro‐LEDs) are highly promising for next‐generation transparent displays owing to their exceptional brightness, fast response time, and environmental stability. However, conventional active‐matrix (AM) driving schemes based on thin‐film transistors (TFTs) and capacitors suffer from limited optical transmittance, scalability challenges, and complex fabrication. Here, a novel AM driving architecture is proposed, incorporating vertically stacked transparent memristor (T‐MEMTs) to drive transparent micro‐LEDs. The T‐MEMT, composed of an ITO/TiO 2 /HfO 2 /ITO structure, exhibits 17 stable multilevel resistance states and excellent switching endurance, enabling precise brightness modulation without the need for external capacitors. Owing to its high optical transmittance (>85% in the visible range) and simple two‐terminal configuration, the T‐MEMT is monolithically integrated on top of micro‐LEDs, significantly enhancing the integration density compared to TFT‐based counterparts. To demonstrate the feasibility of the proposed AM scheme, an 8 × 8 transparent micro‐LED array is fabricated via direct line deposition without transfer or bonding processes, successfully displaying static characters (“A”, “S”, and “L”) and dynamic grayscale images by AM operation of T‐MEMTs. This work offers a highly integrated, transparent, and scalable AM display platform suitable for applications in augmented/virtual reality, automotive head‐up displays, and smart window technologies.