Modeling the comosition of ternary III-V nanowires and axial nanowire heterostructures

We present a new analytical approach for understanding and tuning the composition of ternary nanowires of III-V semiconductor compounds and interfacial abruptness of axial nanowire heterostructures. It is shown how the interfacial abruptness can be sharpened to the monolayer limit in Au-catalyzed axial InP/InAs/InP NW heterostructures.