Modeling of high voltage 4H-SiC JFETs and MOSFETs for power electronics applications

Silicon Carbide (SiC), with its high critical electric field property and the capability of operation at high temperature, has attracted much attention and shown to be a promising semiconductor material for high power devices. Some of the most widely used devices in power circuits are the JFETs and the MOSFETs. Based on characterization of high voltage 4H-SiC JFET and MOSFET, this work compares the using of these two kinds of devices in power systems from both electrical and thermal points of view and compact models are developed for circuit simulations.