Investigation on split-gate RSO MOSFET for 30 V breakdown

In this work, we have modelled a RSO (Resurf Stepped Oxide) and a split-gate RSO MOSFET for a 30 V breakdown range. Simulations corroborate an impressive reduction in the on-resistance and the Miller charge for the Split-Gate RSO MOSFET. Furthermore, we have investigate on the basic physical layout parameters and our results suggest that the split-gate RSO solution is especially suitable to reduce both switching losses as well as conduction losses. In addition, we have compared our results to previously reported lateral and vertical devices illustrating the excellent properties of the split-gate RSO MOSFET.