Optoelectronic devices based on GaN, AlGaN, InGaN homo-heterojunctions and superlattices

We describe the deposition and characterization of single layers, homo-heterojunctions and superlattices of the AlxGa1-xN and InxGa1-xN material systems. Measurements are discussed indicating of 2D electron gas at heterojunction interfaces. Several photonic devices such as UV detectors, quarter wave reflector stacks, light emitting diodes and optically pumped lasing cavities are also described.