Based simulation of high gain and low breakdown voltage InGaAs/InP avalanche photodiode

The InGaAs/InP avalanche photodiode (APD) of thin heterostructure charge layer has studied. Apsys software is used for simulation. For reducing the dark current and achieving higher avalanche gain, a 30 nm InP charge layer and 100 nm InGaAsP grade charge layer used between 400 nm multiplication and absorption layers. Simulation results demonstrated that the low dark current properties and low breakdown voltage (17.5 V) had achieved. The avalanche gain is 88 at reverse bias voltage 17.2 V, and reached 300 at 17.4 V before break down.