Explanation of metallic and semiconducting temperature dependent resistivity of La0.91Rb0.06Mn0.94O3 manganites

The present paper focuses on a quantitative analysis of the metallic and semiconducting behaviour of electrical resistivity in La0.91Rb0.06Mn0.94O3 manganites. The contribution of inherent low-frequency acoustic phonons as well as high-frequency optical phonons, to the electron–phonon resistivity is estimated. The computed phonon resistivity is compared with that of reported metallic resistivity, accordingly ρdiff = [ρexp−{ρ0+ρe-ph(=ρac+ρop)}] have been analyzed through electron-electron scattering. Also, the difference can be varies linearly with T4.5 in accordance with the electron-magnon scattering in the double exchange process Alternatively, in high temperature regime (T > TP) the semiconducting nature is discussed with variable range hopping (VRH) and small polaron conduction (SPC) model.