Convertible Volatile and non-Volatile Resistive Switching in a Self-Rectifying Pt/TiOx/Ti Memristor
作者
Zuheng Wu,Xumeng Zhang,Tuo Shi,Yongzhou Wang,Rui Wang,Jian Lü,Jinsong Wei,Peiwen Zhang,Qi Liu
出处
期刊:日期:2021-04-08卷期号:: 1-3被引量:11
标识
DOI:10.1109/edtm50988.2021.9420826
摘要
In this work, a multi-functional self-rectifying memristor (Pt/TiOx/Ti) is fabricated. The device shows convertible volatile and non-volatile resistive switching. More importantly, the device has a high rectifying ratio in both switching modes (~105for volatile and 106for non-volatile), which is favorable for high-density 3D vertical integration. The convertible multi-switching behaviors and high self-rectifying ratio in a single memristor provide the flexibility for multi-functional applications in a large-scale array.