二次谐波产生
非线性光学
红外线的
激光器
四面体
卤化物
光电子学
带隙
化学
非线性光学
结晶学
材料科学
光学
非线性系统
无机化学
物理
量子力学
作者
Wenfeng Zhou,Zhi‐Hui Shi,Wenlong Liu,Sheng‐Ping Guo
标识
DOI:10.1016/j.jallcom.2021.162602
摘要
Chalcohalides are attractive infrared (IR) nonlinear optical (NLO) materials because they can take advantages of the large second-harmonic generation (SHG) responses of chalcogenides and high laser-induced damage thresholds (LIDTs) of halides simultaneously, which are two correlated while contradictory indicators of the NLO performance. Here, a new chalcohalide, K2Ba3Ge3S9Cl2, was synthesized by a high temperature solid-state reaction, and it crystallizes in the polar noncentrosymmetric space group P63. The fundamental structural unit [Ge3S9]6– rings formed by three corner-sharing [GeS4]4– tetrahedra construct the framework, which further connects with {[KS3Cl]6–}∞ chains to build up the structure with Ba and K/Ba cations occupying the cavities. It exhibits a widest band gap of 3.69 eV among all Ba-based chalcohalides, and a high LIDT around 28.8 times that of AgGaS2. It exhibits a SHG intensity around 0.34 times that of AGS. These experimental results are verified by theoretical calculations on its electronic structure and optical properties.
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