记忆电阻器
钙钛矿(结构)
纳米技术
神经形态工程学
灵活性(工程)
电阻随机存取存储器
计算机科学
材料科学
功率消耗
物联网
电气工程
工程类
人工智能
功率(物理)
电压
嵌入式系统
物理
人工神经网络
统计
量子力学
化学工程
数学
作者
Himangshu Jyoti Gogoi,Kunal Bajpai,Arun Tej Mallajosyula,Ankur Solanki
标识
DOI:10.1021/acs.jpclett.1c02105
摘要
Hybrid organic-inorganic metal halide perovskite (HOIP)-based memristors have captured strong attention not only as an emerging candidate for next-generation high-density information storage technology but also for use in healthcare technology and the Internet of Things (IoT) because of their unique properties: low weight, flexibility, compatibility, stretchability, and low power consumption. In this Perspective, we review the recent advances of various aspects of flexible memristors focusing on the selection of the flexible substrates, materials, interfaces, several resistive switching mechanisms, and different methodologies of perovskite growth. The current state of the art of the memristor as an artificial synapse, light-induced resistive switching, and logic gates is comprehensively and systematically reviewed. Finally, we briefly discuss the stability factors of perovskites and present the conclusion with a broad outlook on the progress and challenges in the field of perovskite-based flexible memristors.
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