绝缘体上的硅
响应度
光电子学
光电探测器
材料科学
接口
薄脆饼
波导管
光子学
带宽(计算)
暗电流
光子集成电路
消光比
波长
硅
计算机科学
电信
计算机硬件
作者
Ying Xue,Yu Han,Yeyu Tong,Zhao Yan,Yi Wang,Zunyue Zhang,Hon Ki Tsang,Kei May Lau
出处
期刊:Optica
[Optica Publishing Group]
日期:2021-08-06
卷期号:8 (9): 1204-1204
被引量:46
标识
DOI:10.1364/optica.431357
摘要
Integrating light emission and detection functionalities using efficient III-V materials on Si wafers is highly desirable for Si-based photonic integrated circuits. To fulfill the need of high-performance photodetectors (PDs) monolithically integrated on Si for Si photonics, we demonstrate III-V PDs directly grown on a InP/Si-on-insulator (SOI) platform parallel to the Si device layer in a variety of device dimensions. Device characteristics including a 3 dB bandwidth beyond 40 GHz, open eye diagrams at 40 Gb/s, a dark current of 0.55 nA, a responsivity of 0.3 A/W at 1550 nm, and 0.8 A/W at 1310 nm together with a 410 nm operation wavelength span from 1240 nm to 1650 nm are achieved. We further simulate the feasibility of interfacing the III-V PDs with the Si waveguide by designing waveguide-coupled PDs with butt coupling schemes. These results point to a practical solution for the monolithic integration of III-V active components and Si-based passive devices on a InP/SOI platform in the future.
科研通智能强力驱动
Strongly Powered by AbleSci AI