Enhancement of Responsivity in Solar-Blind UV Detector With Back-Gate MOS Structure Fabricated on β-Ga2O3 Films

Monoclinic Ga 2 O 3 ( β -Ga 2 O 3 ) films were grown on Si/SiO 2 by using MOCVD. Then, we fabricated the solar-blind photodetector with a back-gate MOS structure. The device exhibited obvious photoresponse under 254-nm UV light illumination, and the photocurrent increased by five orders of magnitude, which could be controlled by V GS . The current generated under dark conditions could also be regulated by V GS and tended to constant when the regulation of V GS was reaching saturation. Meanwhile, V GS was confirmed to have a certain ability to regulate the photocurrent. The present device demonstrated excellent stability and fast response (rise) and recovery (decay) times under the 254-nm light illumination as well as a responsivity of 417.5 A/W, suggesting a valuable application in solar-blind UV photodetectors.