High sensitivity and low dark current PIN photodiode with homojunction in n-InGaAaS/InP isotype heterostructure

The preparation and properties of Zn-diffusion homojunction InP/In/sub 0.53/Ga/sub 0.47/As photodiodes capable to operate in the 0.8-1.7 /spl mu/m wavelength range are described. These PIN photodiodes exhibit a sensitivity of 0.3 A/W at 0.8 /spl mu/m wavelength and 0.82 A/W at 1.3 /spl mu/m, a generation-recombination limited dark current of 10/sup -7/ A/mm/sup 2/ and 140 ps risetime.