Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition

Plasma-enhanced atomic layer deposition (PEALD) technique using trimethylaluminum (TMA) precursors and gas mixed with gas, was adopted as a promising method for growing thin films with improved electrical properties compared to the conventional ALD. PEALD provides a higher growth rate of 0.18 nm/cycle than ALD does of 0.11 nm/cycle at 100°C. Due to superior film density of PEALD compared to that of ALD, excellent breakdown fields of 9 MV/cm were obtained in PEALD The dielectric constants for films grown by PEALD were also higher than constants produced by ALD. © 2004 The Electrochemical Society. All rights reserved.