Reversible fluorination of graphene: Evidence of a two-dimensional wide bandgap semiconductor

We report the synthesis and evidence of graphene fluoride, a two-dimensional\nwide bandgap semiconductor derived from graphene. Graphene fluoride exhibits\nhexagonal crystalline order and strongly insulating behavior with resistance\nexceeding 10 G$\\Omega$ at room temperature. Electron transport in graphene\nfluoride is well described by variable-range hopping in two dimensions due to\nthe presence of localized states in the band gap. Graphene obtained through the\nreduction of graphene fluoride is highly conductive, exhibiting a resistivity\nof less than 100 k$\\Omega$ at room temperature. Our approach provides a new\npath to reversibly engineer the band structure and conductivity of graphene for\nelectronic and optical applications.\n