A Flexible GaN Nanowire Array‐Based Schottky‐Type Visible Light Sensor with Strain‐Enhanced Photoresponsivity

A flexible GaN nanowire array-based Schottky-type visible light sensor with high sensitivity and responsivity is fabricated by transferring GaN nanowire arrays from a SiO2/Si substrate to a transparent and flexible polyethylene terephthalate substrate. The external strains/forces can improve the photoresponse of the flexible light sensor by up to 1100% via the piezo-phototronic effect. As a service to our authors and readers, this journal provides supporting information supplied by the authors. Such materials are peer reviewed and may be re-organized for online delivery, but are not copy-edited or typeset. Technical support issues arising from supporting information (other than missing files) should be addressed to the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.