The Study of HgCdTe on Si by MBE

The recent research development of Si/HgCdTe by MBE was reported.Different tilted substrates were studied to inhibit mismatch dislocations at large lattice mismatch system of Si/HgCdTe.The relationship between FWHM of XRD and EPD was found.And the non-scatheless evaluation for crystal quality of epilayer was established,which could be feed back to optimize the growth condition.By above studies,the best FWHM value of 15~20μm Si/CdTe was 54arcsec,corresponding to EPD less than 2×10~6/cm~2.It was almost as same as the result on GaAs/CdTe at same thickness,which reached to or was better than the best result in other reports.The lowest FWHM value of 51arcsec was obtained on 3in 10μm Si/HgCdTe,which had been primarily applied for the fabrication of MW 320×240 IRFPAs.