化学浴沉积
薄膜
结晶度
铟
材料科学
扫描电子显微镜
带隙
基质(水族馆)
分析化学(期刊)
沉积(地质)
透射率
衍射
光学
化学
纳米技术
光电子学
复合材料
沉积物
古生物学
地质学
物理
海洋学
生物
色谱法
作者
Parisa Esmaili,Haleh Kangarlou,Mahmood Ghorannevis
标识
DOI:10.1134/s2070205119060121
摘要
Indium sulfide thin films were prepared by chemical bath deposition (CBD) method on a glass substrate at a sedimentation time of about 45 min. The films were grown at different bath temperature as 30, 55, 70 and 85°C. The crystallinity, nanostructures and morphology of the prepared films have been investigated by using X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM) analyses. Optical reflectance of layers was measured in the energy range of 1.5–5.5 eV by spectrophotometer instrument. Kramers–Kronig relations were used to calculate the optical constants. The X-ray diffraction spectrum showed that by increasing in growth temperature, crystalline structure was changed. According to the atomic force microscope images, with increasing growth temperature, roughness increases consistently. Optical results revealed that the highest optical band gap of 3.4 eV and the highest transmittance of ~90% were achieved at higher deposition temperature (85°C).
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