神经形态工程学
材料科学
光电子学
整改
铁电性
电压
能量转换效率
计算机科学
记忆电阻器
光伏系统
电气工程
人工智能
工程类
人工神经网络
电介质
作者
Yanrong Wang,Feng Wang,Zhenxing Wang,Junjun Wang,Jia Yang,Yuyu Yao,Ningning Li,Marshet Getaye Sendeku,Xueying Zhan,Congxin Shan,Jun He
出处
期刊:Nano Research
[Springer Nature]
日期:2021-09-06
卷期号:14 (11): 4328-4335
被引量:33
标识
DOI:10.1007/s12274-021-3833-x
摘要
Neuromorphic machine vision has attracted extensive attention on wide fields. However, both current and emerging strategies still suffer from power/time inefficiency, and/or low compatibility, complex device structure. Here we demonstrate a driving-voltage-free optoelectronic synaptic device using non-volatile reconfigurable photovoltaic effect based on MoTe2/α-In2Se3 ferroelectric p-n junctions. This function comes from the non-volatile reconfigurable built-in potential in the p-n junction that is related to the ferroelectric polarization in α-In2Se3. Reconfigurable rectification behavior and photovoltaic effect are demonstrated firstly. Notably, the figure-of-merits for photovoltaic effect like photoelectrical conversion efficiency non-volatilely increases more than one order. Based on this, retina synapse-like vision functions are mimicked. Optoelectronic short-term and long-term plasticity, as well as basic neuromorphic learning and memory rule are achieved without applying driving voltage. Our work highlights the potential of ferroelectric p-n junctions for enhanced solar cell and low-power optoelectronic synaptic device for neuromorphic machine vision.
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