极紫外光刻
干涉光刻
X射线光刻
材料科学
平版印刷术
下一代光刻
抵抗
极端紫外线
光学
光电子学
倍半硅氧烷氢
光刻胶
同步辐射
纳米光刻
制作
纳米技术
电子束光刻
激光器
物理
图层(电子)
替代医学
病理
医学
作者
Nassir Mojarad,Dimitrios Kazazis,Yasin Ekinci
摘要
We demonstrate the fabrication of metal and dielectric nanostructures using interference lithography with extreme ultraviolet (EUV) and soft x-ray synchrotron radiation down to a 2.5 nm wavelength. These specific wavelengths are chosen because of the industrial relevance for EUV lithography and because they are in the vicinity of the oxygen absorption edge of the high-resolution hydrogen silsesquioxane photoresist, allowing for the exposure of thick layers. We investigate the requirements to fabricate such structures and demonstrate that tall metal nanostructures with aspect ratios up to 7 could be achieved by EUV interference lithography and subsequent electroplating. We use the unique depth-of-focus-free property of interference and achromatic Talbot lithography to fabricate uniformly tilted dielectric nanostructures.
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