声子
材料科学
凝聚态物理
吸附
分子物理学
物理
物理化学
化学
作者
L. Dobrzyński,Abdellatif Akjouj,B. Syla,Bahram Djafari‐Rouhani
标识
DOI:10.12693/aphyspola.81.85
摘要
Resonant phonons, sometimes also called leaky waves, are phonons associated with a crystal defect, a surface, an adsorbed layer and whose frequencies fall inside the bulk crystal band.Such resonant phonons were studied experimentally and theoretically before for clean surfaces and for adsorbed monolayers.We present here a study of resonant phonons associated with the adsorption of a slab of L monolayers on a substrate.With the help of a sim- ple atomic model, we obtained a closed form expression giving the variation of the transverse phonon density of states associated with the adsorption of the slab.An application which qualitatively simulates the adsorption of L monolayers of Ge on Si shows the existence of well-defined resonant phonons within the bulk acoustic band of the substrate.
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