DUV and VUV lithography application of excimer laser systems

The historical/predicted feature scaling and imaging wavelength reduction are shown. The current adoption of 193 nm wavelength illumination for 130-100 nm IC node manufacturing in 2001 and the predicted integration of 157 nm VUV illumination extend the regime of sub-wavelength imaging. Since image resolution is proportional to illumination wavelength, additional advances in the photolithography process performance enable the high rate of IC device scaling. The technological challenges in achieving the lithographic feature scaling beyond the 150 nm and 130 nm IC nodes of today are also addressed.