钝化
材料科学
等离子体增强化学气相沉积
硅
退火(玻璃)
非晶硅
晶体硅
化学气相沉积
纳米晶硅
形成气体
图层(电子)
兴奋剂
硼
化学工程
纳米技术
复合材料
光电子学
化学
有机化学
工程类
作者
Audrey Morisset,R. Cabal,Bernadette Grange,Clément Marchat,José Alvarez,Marie‐Estelle Gueunier‐Farret,Sébastien Dubois,Jean‐Paul Kleider
标识
DOI:10.1002/pssa.201800603
摘要
Passivating the contacts of crystalline silicon (c‐Si) solar cells with a poly‐crystalline silicon (poly Si) layer on top of a thin silicon oxide (SiO x ) film are currently of growing interest to reduce recombination at the interface between the metal electrode and the c‐Si substrate. This study focuses on the development of boron‐doped poly‐Si/SiO x structure to obtain a hole selective passivated contact with a reduced recombination current density and a high photo‐voltage potential. The poly‐Si layer is obtained by depositing a hydrogen‐rich amorphous silicon layer by plasma enhanced chemical vapor deposition (PECVD) exposed then to an annealing step. Using the PECVD route enables to single side deposit the poly Si layer, however, a blistering of the layer appears due to its high hydrogen content, which leads to the degradation of the poly‐Si layer after annealing. In this study, the deposition temperature and gas flow ratio used during PECVD step are optimized to obtain blister‐free poly‐Si layer. The stability of the surface passivation properties over time is shown to depend on the blister density. The surface passivation properties are further improved thanks to a post process hydrogenation step. As a result, a mean implied photo‐voltage value of 714 mV is obtained.
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