材料科学
光学
偏振旋转器
光电子学
极化(电化学)
硅光子学
氮化硅
宽带
光子集成电路
光子学
分束器
插入损耗
硅
包层(金属加工)
分路器
波导管
功率分配器和定向耦合器
谐振器
波长
物理
双折射
激光器
冶金
化学
物理化学
作者
Linghua Wang,Hejie Peng,Langteng Zheng,Huaixi Chen,Yazhen Zhang,Jiwei Huang,Xinbin Zhang,Xinkai Feng,Rongshan Wei,Shao Hao Wang,Min Zhu
出处
期刊:Applied Optics
[Optica Publishing Group]
日期:2023-01-09
卷期号:62 (4): 1046-1046
被引量:6
摘要
A broadband and CMOS-compatible polarization beam splitter and rotator (PSR) built on the silicon nitride-on-silicon multilayer platform is presented. The PSR is realized by cascading a polarization beam splitter and a polarization rotator, which are both subtly constructed with an asymmetrical directional coupler waveguide structure. The advantage of this device is that the function of PSR can be directly realized in the SiN layer, providing a promising solution to the polarization diversity schemes in SiN photonic circuits. The chip is expected to have high power handling capability as the light is input from the SiN waveguide. The use of silicon dioxide as the upper cladding of the device ensures its compatibility with the metal back-end-of-line process. By optimizing the structure parameters, a polarization conversion loss lower than 1 dB and cross talk larger than 27.6 dB can be obtained for TM-TE mode conversion over a wavelength range of 1450 to 1600 nm. For TE mode, the insertion loss is lower than 0.26 dB and cross talk is larger than 25.3 dB over the same wavelength range. The proposed device has good potential in diversifying the functionalities of the multilayer photonic chip with high integration density.
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