Enhanced Photodetection Performance of InBiSe3/ReS2 Polarization‐Sensitive Heterostructure Photodetectors

Abstract Individual anisotropic two‐dimensional (2D) materials have been widely applied for developing polarization‐sensitive photodetectors, but they often suffer from limitations in photoresponsivity, detection range, etc. To overcome these challenges, van der Waals (vdW) heterostructures created by stacking different 2D materials provide a promising solution to enhance the performance of the photoelectronic device. In this work, a novel polarization‐sensitive photodetector is developed by leveraging a heterojunction formed by InBiSe 3 and anisotropic ReS 2 nanoflakes. The InBiSe 3 /ReS 2 vdW heterostructure devices exhibit excellent photodetection performance with a high photoresponsivity (R) of 7.68 A W −1 and a specific detectivity (D * ) up to 1.26 × 10 11 Jones as well as an external quantum efficiency (EQE) of 1790% under 532 nm laser irradiation. Additionally, benefiting from the broadband light absorption of InBiSe 3 crystals together with the pronounced anisotropic electronic and optical characteristics of ReS 2 flakes, the devices demonstrate a broad spectral response range from 402 to 1006 nm with a distinct polarization sensitivity of 1.24. Moreover, the devices exhibit extraordinary optical communication and high contrast polarimetric imaging capacity. This work demonstrates the enhanced photodetection performance with the InBiSe 3 /ReS 2 vdW heterostructures operating in a photoconductive mode and illustrates promising application of these heterostructures in integrated optoelectronic systems.