等离子体
阴极
对偶(语法数字)
磁场
计算机模拟
领域(数学)
材料科学
计算物理学
物理
机械
核物理学
电气工程
数学
艺术
文学类
量子力学
纯数学
工程类
作者
Tingru Zhu,Dongpo Fu,Kun Zhu,Shixian Cai,Jie Lie,Caijie Zhang,Yingjie Li,Kai Wang,Haoyang Lan,Kedong Wang,Xicheng Xie,Xueqing Yan
出处
期刊:Physica Scripta
[IOP Publishing]
日期:2024-09-18
卷期号:99 (12): 125602-125602
被引量:1
标识
DOI:10.1088/1402-4896/ad7c90
摘要
Abstract The Dual hollow cathode plasma source uses hollow cathode cylindrical sputtering and ionizing metal elements, which has a high material utilization rate and has potential application in the field of material modification. Its performance index requires the cooperation of electrode discharge parameters and the rational utilization of the inner surface of the hollow cathode. In this paper, a two-dimensional fluid model of a Dual hollow cathode structure is developed to simulate the basic distribution of the Dual hollow cathode discharge, which fills the central region of the Dual hollow cathode structure and the electrons oscillate on the axis. The effects of electrode parameters and hollow cathode radius on the discharge were investigated. The results show that the radial electron density of the hollow cathode increases with increasing heated cathode voltage, but as the hot cathode voltage continues to expand beyond 1200 V this trend becomes less obvious. The enhancement of the wall ion current by the heated cathode voltage is very pronounced, and the hollow cathode discharge is the result of the mutual enhancement of the heated cathode voltage and the hollow cathode voltage. Hollow cathode sputtering needs to reach a voltage threshold of 300 V, and the existence of an optimal radius (r = 4 mm−6 mm) to achieve a high plasma density and at the same time favor hollow cathode sputtering.
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