Low Turn-On Voltage and High-Power Figure-of-Merit GaN HEMTs With Reverse Blocking Capability

In this article, we demonstrate high-performance reverse blocking GaN high-electron-mobility transistors (HEMTs) with a recessed-drain structure on AlGaN/GaN/AlGaN double heterostructure. By using a low damage recessed-drain structure, the turn-on voltage ( ${V}_{\text {ON}}{)}$ as small as 0.35 V is achieved. Furthermore, owing to enhanced carrier confinement, a low subthreshold swing (SS) of 63 mV/decade and a high ${I}_{\text {ON}} / {I}_{\text {OFF}}$ ratio of $10^{{10}}$ are attained. Meanwhile, the threshold voltage shift is less than 0.15 V under the gate bias stresses of −20, −10, and 2 V. The fabricated devices show an excellent gate-bias-induced threshold voltage stability. Furthermore, the proposed devices present a high forward breakdown voltage ( ${V}_{\text {FBR}}{)}$ of 2732 V, a high reverse breakdown voltage ( ${V}_{\text {RBR}}{)}$ of −2764 V, and a low reverse leakage current ( ${I}_{\text {R}}{)}$ of 0.6 nA/mm at ${V}_{\text {DS}}$ = −2500 V. The forward and reverse power figures-of-merits (FOMs) of the fabricated devices are 526 and 538 MW/cm2, respectively, which are the highest among all existing GaN HEMTs with reverse blocking capability.