光催化
X射线光电子能谱
催化作用
钴
光化学
材料科学
光致发光
电子顺磁共振
氢
化学
化学工程
核磁共振
有机化学
物理
工程类
光电子学
冶金
作者
Jiachen Xu,Qinran Li,Dejian Sui,Wei Jiang,Fengqi Liu,Xiuquan Gu,Yulong Zhao,Pengzhan Ying,Liang Mao,Xiaoyan Cai,Junying Zhang
出处
期刊:Nanomaterials
[Multidisciplinary Digital Publishing Institute]
日期:2023-01-19
卷期号:13 (3): 420-420
被引量:13
摘要
The ternary metal sulfide CdIn2S4 (CIS) has great application potential in solar-to-hydrogen conversion due to its suitable band gap, good stability and low cost. However, the photocatalytic hydrogen (H2) evolution performance of CIS is severely limited by the rapid electron-hole recombination originating from the slow photogenerated hole transfer kinetics. Herein, by simply depositing cobalt phosphate (CoHxPOy, noted as Co-Pi), a non-precious co-catalyst, an efficient pathway for accelerating the hole transfer process and subsequently promoting the H2 evolution reaction (HER) activity of CIS nanosheets is developed. X-ray photoelectron spectroscopy (XPS) reveals that the Co atoms of Co-Pi preferentially combine with the unsaturated S atoms of CIS to form Co-S bonds, which act as channels for fast hole extraction from CIS to Co-Pi. Electron paramagnetic resonance (EPR) and time-resolved photoluminescence (TRPL) showed that the introduction of Co-Pi on ultrathin CIS surface not only increases the probability of photogenerated holes arriving the catalyst surface, but also prolongs the charge carrier's lifetime by reducing the recombination of electrons and holes. Therefore, Co-Pi/CIS exhibits a satisfactory photocatalytic H2 evolution rate of 7.28 mmol g-1 h-1 under visible light, which is superior to the pristine CIS (2.62 mmol g-1 h-1) and Pt modified CIS (3.73 mmol g-1 h-1).
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