材料科学
钝化
薄膜晶体管
氧化物
晶体管
光电子学
纳米技术
冶金
图层(电子)
电气工程
工程类
电压
作者
Yayi Chen,Wei Zhong,Rongsheng Chen,Delang Lin,Linfeng Lan,Jianfeng Zhang,Yuan Liu
标识
DOI:10.1109/ted.2023.3327988
摘要
Nontoxic superhydrophobic passivation layers (PVLs) based on octadecylamine (ODA) and polydimethylsiloxane (PDMS) mixtures are prepared to improve the stability of InSnZnO (ITZO) thin-film transistors (TFTs) in harsh wet environments. After the passivation, the electrical properties of ITZO TFTs are partially improved for the interfacial dipoles between the ITZO films and the PVLs. Moreover, the PVLs effectively inhibit the contact and adsorption of water molecules on the surface attributed to their superhydrophobicity. Thus, the passivated devices exhibit stable electrical performance in extreme environments, including long-term positive bias stress (PBS) in the humid atmosphere, long-term water immersion, and strong acid/alkaline conditions. In addition, the superhydrophobic PVLs maintain the superhydrophobicity under 10000 bending cycles with a low bending radius, and the electrical characteristics of the passivated devices exhibit negligible degradation. This indicates that the superhydrophobic PVLs are suitable to prepare flexible oxide TFTs with high reliability.
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