谐振器
压电
材料科学
声学
缩放比例
声波
航程(航空)
光电子学
物理
几何学
数学
复合材料
作者
Abhay Kochhar,R. Vetury,Jeff Leathersich,Zachary Schaffer,Craig G. Moe,D. Kim,K. Cheema,Mary Winters,J.B. Shealy
标识
DOI:10.1109/ius51837.2023.10306825
摘要
This paper demonstrates the scaling of bulk acoustic wave (BAW) resonator to create micro-acoustic RF filtering solutions in the 8 – 12 GHz range for X band applications using periodically polarized piezoelectric films (P3F). P3F BAW technology overcomes the traditional thickness frequency trade-off of single layer BAW technology. P3F BAW resonators fabricated using XBAW process in the frequency range of 8-10 GHz with FoM (${{\text{k}}_{\text{t}}}^2 \times {{\text{Q}}_{\text{p}}}$ product) of 80-120 are reported in this work.
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