纳米线
材料科学
纳米技术
氧化铟锡
铟
导电体
透明导电膜
溅射
光电子学
锡
金属
薄膜
复合材料
冶金
作者
Shengrong Ye,Aaron R. Rathmell,Zuofeng Chen,Ian Stewart,Benjamin J. Wiley
标识
DOI:10.1002/adma.201402710
摘要
There is an ongoing drive to replace the most common transparent conductor, indium tin oxide (ITO), with a material that gives comparable performance, but can be coated from solution at speeds orders of magnitude faster than the sputtering processes used to deposit ITO. Metal nanowires are currently the only alternative to ITO that meets these requirements. This Progress Report summarizes recent advances toward understanding the relationship between the structure of metal nanowires, the electrical and optical properties of metal nanowires, and the properties of a network of metal nanowires. Using the structure–property relationship of metal nanowire networks as a roadmap, this Progress Report describes different synthetic strategies to produce metal nanowires with the desired properties. Practical aspects of processing metal nanowires into high‐performance transparent conducting films are discussed, as well as the use of nanowire films in a variety of applications.
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