State-of-the-Art and Trends in Through-Silicon Via (TSV) and 3D Integrations
作者
John H. Lau
标识
DOI:10.1115/imece2010-37783
摘要
3D integration consists of 3D IC packaging, 3D IC integration, and 3D Si integration. They are different and in general the TSV (through-silicon via) separates 3D IC packaging from 3D IC integration and 3D Si integration since the latter two use TSV but 3D IC packaging does not. TSV (with a new concept that every chip could have two surfaces with circuits) is the focus of this investigation. State-of-the-art, key differences, trends of these three technologies, and a 3D integration roadmap are presented.