InGaN Resonant Microcavity With n+-Porous-GaN/p+-GaN Tunneling Junction

InGaN-based resonant cavity light-emitting diode (RC-LED) structures with top and bottom porous-GaN distributed Bragg reflectors (DBRs) were demonstrated. Epitaxial $\text{n}^{+}$ -GaN:Si/n-GaN:Si stack structures were transformed into top/bottom porous-GaN:Si/n-GaN:Si DBRs through a doping-selective electrochemical wet etching process. The $\text{n}^{+}$ -porous-GaN/ $\text{p}^{+}$ -GaN tunneling junction structure was designed for the current injecting into the InGaN active layer. The line-widths of the electroluminescence spectra were reduced from 23.3 nm at 434.0 nm to 1.9 nm at 434.1 nm due to the resonant microcavity effect.