Effect of interdiffusion on dark current responseof GaInP/GaAs quantum well infrared photodetectors

The dark current response of interdiffused GaInP/GaAs quantum well intersubband infrared photodetectors is theoretically analysed for the case of group-III-only interdiffusion. The abrupt carrier confinement profile that is maintained after interdiffusion exhibits an increase in barrier height, and a significant reduction in the dark current of the interdiffused photodetector can be achieved.