Nonlinear susceptibilities of AIIIBV semiconductors in far-infrared and microwave range

An approach to calculation of nonlinear susceptibilities of semiconductors in far infrared and microwave range based on account of interaction of free carries with intrinsic excitations of semiconductors and ionized impurities is developed. Numerical dependencies of real part of third order non-linear susceptibility on frequency, temperature and concentration of impurities for a set of semiconductors are obtained.