功率(物理)
功率带宽
功率增加效率
计算机科学
线性放大器
作者
M. Apostolidou,Mark P. van der Heijden,D.M.W. Leenaerts,Jan Šonský,A. Heringa,I. Volokhine
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:2009-05-01
卷期号:44 (5): 1372-1379
被引量:52
标识
DOI:10.1109/jssc.2009.2020680
摘要
A 30 dBm single-ended class-E RF power amplifier (PA) is fabricated in a baseline 65 nm CMOS technology. The PA is constructed as a cascode stage formed by a standard thin-oxide device and a dedicated novel high voltage extended-drain thick-oxide device. Both devices are implemented without using additional masks or processing steps. The proposed PA uses an innovative self-biasing technique to ensure high power-added efficiency (PAE) at both high output power (P out ) and power back-off levels. At 2 GHz, the PA achieves a PAE of 60% at a Pout of 30 dBm and a PAE of 40% at 16 dB back-off. Stress tests indicate the reliability of both the novel high voltage device and the design.
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