响应度
纳米片
光电探测器
超短脉冲
二硫化钼
材料科学
欧姆接触
光电流
光电子学
单层
量子效率
制作
响应时间
纳米技术
光学
物理
激光器
病理
计算机图形学(图像)
冶金
替代医学
图层(电子)
医学
计算机科学
作者
Weiwei Tang,Changlong Liu,Lin Wang,Xiaohong Chen,Man Luo,Wanlong Guo,Shaowei Wang,Wei Lü
摘要
Two-dimensional layered materials, such as molybdenum disulfide, are emerging as an exciting material system for future electronics due to their unique electronic properties and atomically thin geometry. In this work, MoS2-based FETs are fabricated using mechanical cleavage and standard photolithographic and metal evaporation techniques, and the detector exhibits a good ohmic contact. We show that the multilayer molybdenum disulfide photodetector has a fast photoresponse as short as 42 μs. The fast photodetector response is due to the decrease in the trap states in MoS2 flakes compared to monolayer MoS2, making its photoresponse time close to its intrinsic response. The large photocurrent with the responsivity and external quantum efficiency of 59 A/W and 13 800% for the wavelength of 532 nm was also measured. The fast response time, high responsivity, and the ease of fabrication of these devices make them important components for future optoelectronic devices.
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