极化(电化学)
俘获
不对称
性能增强
计算机科学
光电子学
存水弯(水管)
材料科学
物理
化学
量子力学
物理化学
医学
生物
物理医学与康复
气象学
生态学
作者
Song‐Hyeon Kuk,Seungmin Han,Bong-Ho Kim,Seung Hyub Baek,Jae‐Hoon Han,Sang-hyeon Kim
标识
DOI:10.1109/iedm19574.2021.9720642
摘要
We report a comprehensive understanding of HZO-based n/pFeFET operation using (double-pulsed) quasi-static CV and pulsed IV techniques, providing the true nonvolatile polarization and excess trap density, which has not been reported yet. Also, we conceived new insight into the trapped charge and polarization switching by the method, based on the asymmetry of electron/hole trapping in n/pFeFET. Through the analysis, we propose a new erasing operation, resulting in enhanced performance (ex. endurance $> 10^{10}$ cycles), and also proposed physical models of the n/pFeFET operation.
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