聚酰亚胺
材料科学
电容感应
湿度
电容
制作
相对湿度
光电子学
电极
CMOS芯片
电容器
复合材料
图层(电子)
电子工程
电气工程
电压
工程类
医学
化学
物理
替代医学
物理化学
病理
热力学
作者
Xiaoxu Kang,Xiaolan Zhong,Zhenghui Chu,Min Zhang,Xiaoqiang Zhou,Jiming Qi,Qi Jia,Weifa Zhong,Huajian Liang,Xiaozhi Kang,Qingqing Sun
标识
DOI:10.1109/cstic55103.2022.9856837
摘要
In this paper, capacitive humidity sensor was fabricated on 200mm CMOS Al Back End of Line (BEOL). Al interconnect layer with metal FORK structure was used as electrode of the capacitor, and polyimide was used as sensing material which was filled into metal FORK electrode structure. After fabrication, its humidity sensing performance was evaluated and compared with standard sensor, including IV curve, capacitance variation with different relative humidity (RH%), recovery time, etc. Based on the measured data, the humidity sensor device based on polyimide material can well meet the humidity measurement requirements.
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