低压差调节器
跌落电压
CMOS芯片
电压
缓冲放大器
电气工程
晶体管
电压调节器
材料科学
工程类
电子工程
物理
作者
Yajun Lin,Haozheng Wan,Jianxin Yang,Ka Nang Leung
标识
DOI:10.1109/apccas55924.2022.10090352
摘要
An ultra-low-supply output-capacitorless (OCL) low-dropout regulator is presented in this paper. The circuit is based on flipped-voltage-follower-based (FVF-based) LDO with a signal-current enhancer (SCE) and a direct voltage-spike detection part. To enable the LDO to function properly under an ultra-low supply voltage, an additional charge-pump circuit provides a higher supply to the control part of LDO to enlarge the control swing of power transistor. The proposed LDO regulator is designed in UMC 65-nm CMOS process. The threshold voltages of NMOSFET and PMOSFET are 0.374 V and −0.311 V, respectively. The achieved minimum supply voltage is 0.6 V, with output voltage of 0.5 V. The load current ranges between 100 μA and 50 mA. The figure-of-merit of proposed circuit is 0.43 ps.
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