材料科学
光电探测器
光电子学
带隙
光探测
半导体
热稳定性
氮化硼
宽禁带半导体
纳米技术
量子力学
物理
作者
Mengting Qiu,Zhenglin Jia,Mingyang Yang,K. Nishimura,Cheng‐Te Lin,Nan Jiang,Qilong Yuan
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2023-05-02
卷期号:34 (28): 285204-285204
被引量:1
标识
DOI:10.1088/1361-6528/acccfd
摘要
As an ultra-wide bandgap semiconductor, hexagonal boron nitride (h-BN) has drawn great attention in solar-blind photodetection owing to its wide bandgap and high thermal conductivity. In this work, a metal-semiconductor-metal structural two-dimensional h-BN photodetector was fabricated by using mechanically exfoliated h-BN flakes. The device achieved an ultra-low dark current (16.4 fA), high rejection ratio (R205nm/R280nm= 235) and high detectivity up to 1.28 × 1011Jones at room temperature. Moreover, due to the wide bandgap and high thermal conductivity, the h-BN photodetector showed good thermal stability up to 300 °C, which is hard to realize for common semiconductor materials. The high detectivity and thermal stability of h-BN photodetector in this work showed the potential applications of h-BN photodetectors working in solar-blind region at high temperature.
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