A Hierarchical Driving Control Strategy Applied to Parallel SiC MOSFETs

SiC (silicon carbide) MOSFETs have been extensively used in the power electronics industry due to their exceptional characteristics. First, it was found in this study that their driving loss is larger than their conduction loss in high-frequency applications. Based on this finding, this study proposes a hierarchical driving control strategy for improving the parallel-converter efficiency of SiC MOSFETs under light loads. Efficiency under light loads is of great importance for battery-based energy storage systems. To minimize the sum of the conduction loss and driving loss in parallel devices, this study proposes a current-monitoring hierarchical driving strategy based on an active-clamped flyback converter. By monitoring the output current of the converter, the strategy minimizes the sum of the driving and conduction losses by switching the driving state under different loads. The results of simulations indicate the effectiveness of the load-current-monitoring strategy. To verify the effectiveness of this method, a principle prototype of two SiC MOSFETs connected in parallel at 12 V/5 A was fabricated and tested, and the test results showed that there was a maximum improvement of 1.4% in the converter’s efficiency when the load current was in the range of 0.5–1.5 A.