锌黄锡矿
材料科学
兴奋剂
铟
薄膜
能量转换效率
光电子学
薄膜太阳能电池
电子迁移率
图层(电子)
纳米技术
捷克先令
作者
Sumit Korade,Kuldeep Singh Gour,Vijay Karade,Jun Sung Jang,Muhammad Rehan,Satyajeet S. Patil,Tejasvinee S. Bhat,Ashwini Patil,Jae Ho Yun,Jong‐Sung Park,Jihun Kim,P. S. Patil
标识
DOI:10.1021/acsami.3c13813
摘要
Cation incorporation emerges as a promising approach for improving the performance of the kesterite Cu2ZnSn(S,Se)4 (CZTSSe) device. Herein, we report indium (In) doping using the chemical bath deposition (CBD) technique to enhance the optoelectronic properties of CZTSSe thin-film solar cells (TFSCs). To incorporate a small amount of the In element into the CZTSSe absorber thin films, an ultrathin (<10 nm) layer of In2S3 is deposited on soft-annealed precursor (Zn-Sn-Cu) thin films prior to the sulfo-selenization process. The successful doping of In improved crystal growth and promoted the formation of larger grains. Furthermore, the CZTSSe TFSCs fabricated with In doping exhibited improved device performance. In particular, the In-CZTSSe-2-based device showed an improved power conversion efficiency (PCE) of 9.53%, open-circuit voltage (Voc) of 486 mV, and fill factor (FF) of 61% compared to the undoped device. Moreover, the small amount of In incorporated into the CZTSSe absorber demonstrated reduced nonradiative recombination, improved carrier separation, and enhanced carrier transport properties. This study suggests a simple and effective way to incorporate In to achieve high efficiency and low Voc loss.
科研通智能强力驱动
Strongly Powered by AbleSci AI