材料科学
石墨烯
挤压
铜
复合材料
导电体
电阻率和电导率
扫描电子显微镜
晶界
电阻和电导
透射电子显微镜
冶金
微观结构
纳米技术
电气工程
工程类
作者
Bharat Gwalani,Xiao Li,Aditya Nittala,WoongJo Choi,Md. Reza‐E‐Rabby,Julián Escobar,Arun Bhattacharjee,Mayur Pole,Joshua Silverstein,Miao Song,Keerti Kappagantula
标识
DOI:10.1016/j.matdes.2023.112555
摘要
Copper-graphene composites show remarkable electrical performance surpassing traditional copper conductors albeit at a micron scale; there are several challenges in demonstrating similar performance at the bulk scale. In this study, we used shear assisted processing and extrusion (ShAPE) to synthesize macro-scale copper-graphene composites with a simultaneously lower temperature coefficient of resistance (TCR) and improved electrical conductivity over copper-only samples. We showed that the addition of 18 ppm of graphene decreased the TCR of C11000 alloy by nearly 11 %. A suite of characterization tools involving scanning and transmission electron microscopy along with atom probe tomography were used to characterize the grain size, crystallographic orientation, structure, and composition of copper grains and graphene additives in the feedstock and processed samples. We posit that the shear extrusion process may have transformed some of the feedstock graphene additives into higher defect-density agglomerates while retaining the structure of others as mono-to-trilete flakes with lower defect density. The combination of these additives with heterogeneous structures may have been responsible for the simultaneous decrease in TCR and enhanced electrical conductivity of the copper-graphene ShAPE composites.
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