光电阴极
光电流
肖特基势垒
材料科学
石墨烯
光电子学
分解水
化学气相沉积
电化学
纳米技术
化学工程
电极
化学
光催化
催化作用
电子
二极管
物理
工程类
物理化学
量子力学
生物化学
作者
Xiaodong Zhu,Xue Yu,Jiangli Li,Hao Li,Shuai Wang,Yuchen Xu,Yanqing Ma,Lei Ma
标识
DOI:10.1002/cptc.202200272
摘要
Abstract Converting solar energy into hydrogen by photo‐electrochemical cells is believed to be one of the most promising strategies to acquire clean energy. However, one barricade for further improving the performance of the photocathode system is flattening of the Schottky barrier formed at the interface between the p‐type photo‐absorber and metal co‐catalyst (e. g. Pt/p‐Si) due to the mismatch of their Fermi levels. Here, we present a facile way of making photocathodes by transferring high‐quality chemical vapor deposition (CVD) graphene onto p‐type Si as a buffer layer, which can effectively diminish the Pt/p‐Si interfacial barrier and promote charge separation efficiency, hence, improving the photo‐electrochemical performance of such a device for hydrogen generation. The measured photocurrent density is 3.9 times higher than that achieved without graphene buffer. This approach offers a novel route to decrease the Pt/p‐Si interfacial barrier for developing highly efficient solar conversion systems in the future. It can easily be extended to many other photocathode systems.
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